Switch matrix design for beam image system

ABSTRACT

Systems and methods for implementing a detector array are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first element and a second element. The detector comprises a switching element configured to connect the first element and the second element. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority of U.S. application 62/560,122 whichwas filed on Sep. 18, 2017 and which is incorporated herein in itsentirety by reference.

TECHNICAL FIELD

The present disclosure generally relates to the field of detectorarrays, and more particularly, to a detector array applicable forcharged particle detection.

BACKGROUND

Detectors are used in various fields for sensing physically observablephenomena. For example, electron microscopes are useful tools forobserving the surface topography and composition of a sample. In acharged particle beam tool used for microscopy, charged particles aredirected to a sample and may interact with the sample in various ways.For example, after hitting a sample, secondary electrons, backscatteredelectrons, auger electrons, x-rays, visible light, etc. may be emittedfrom the sample and detected by a detector. The scattered particles mayform a beam incident on the detector.

Electron beams comprising backscattered electrons and secondaryelectrons can form one or more beam spots at various locations on asurface of an electron detector. The electron detector can generateelectrical signals (e.g., current, voltage, etc.) that represent anintensity of the detected electron beams. The electrical signals can bemeasured with measurement circuitries (e.g., analog-to-digitalconverters) to obtain a distribution of the detected electrons. Theelectron distribution data collected during a detection time window, incombination with corresponding scan path data of the one or more primaryelectron beams incident on the sample surface, can be used toreconstruct images of the sample structures under inspection. Thereconstructed images can be used to reveal various features of theinternal and/or external structures of the sample, and can be used toreveal any defects that may exist in the sample.

Imperfections in electron optical sub-systems may degrade the quality ofreconstructed images representing the sample. For example, in a casewith multiple primary electron beams scanning a sample and wheremultiple electron beams are emitted by the sample under inspection, dueto the effects of aberration and dispersion in the electron opticalsub-system, electrons from adjacent beams emitted from the sample mayreach the same location of the electron detector surface. As a result,beam spots formed by adjacent electron beams may partially overlap,leading to crosstalk. The effects of crosstalk may be added to theoutput signals of the electron detector as noise. Thus, output signalsof the electron detector may include noise components that do notcorrelate with a particular sample structure under inspection, and thefidelity of image reconstruction suffers.

Therefore, there is a need for a detector array having flexibility toallow electron sensing element reconfiguration. Application specificintegrated circuits (ASICs) may provide flexibility to allow forgrouping of active sensing elements. An ASIC may be useful for anelectron detector array to allow grouping of active sensing elementscorresponding to a particular beam or beamlet spot. Such an ASIC in anelectron detector array would require a switching matrix for controllinggrouping of the particular sensing elements which are desired to begrouped.

However, a conventional switch matrix may face limitations inmanufacturing and practical application due to its complexity. To obtaina high level of flexibility desirable for electron sensing elementreconfiguration in an electron detector array, a very complicated switchmatrix design would he required. A complicated design is difficult to bescaled up.

SUMMARY

Embodiments of the present disclosure provide systems and methods forcharged particle detection. In one embodiment, a detection system isprovided. The detection system may comprise a detector.

In some embodiments, a detector may include a substrate having aplurality of sensing elements. Among the sensing elements may be a firstelement and a second element. The detector may also include a switchingelement configured to connect the first element and the second element.The first clement may be configured to generate a first signal inresponse to the first element detecting a beam, and the second elementmay be configured to generate a second signal in response to the secondelement detecting the beam. The switching element may be configured tobe controlled based on the first signal and the second signal.

In some embodiments, a detector may include a sensor layer having anarray of sensing elements including a first element and a second elementwhere the first element and the second element are adjacent. Thedetector may also include a circuit layer having one or more circuitsconfigured to he electrically connected to the first element and thesecond element. The detector may also comprise a switching elementincluded in the circuit layer. The one or more circuits may beconfigured to generate a first status indicator when the first elementreceives charged particles with a predetermined amount of energy,generate a second status indicator when the second element receivescharged particles with a predetermined amount of energy, and control theswitching element based on the first status indicator and the secondstatus indicator.

In some embodiments, a detector system may include a detector array witha plurality of sensing elements including a first element and a secondelement, and a switching element configured to connect the first elementand the second clement. The detector system may also include one or morecircuits configured to generate a first signal in response to the firstelement detecting a beam, and generate a second signal in response tothe second element detecting the beam. A controller may be provided thatis connected to the one or more circuits.

According to some embodiments, an arrangement can be achieved whicheliminates a trade-off relationship between pixel count and increaseddetector manufacturing difficulties. A detector can be provided suchthat it can achieve a high pixel count, high flexibility, and withoutcorresponding manufacturing difficulties.

Additional objects and advantages of the disclosed embodiments will beset forth in part in the following description, and in part will beapparent from the description, or may be learned by practice of theembodiments. Objects and advantages of the disclosed embodiments may berealized and attained by the elements and combinations set forth in theclaims. However, exemplary embodiments of the present disclosure are notnecessarily required to achieve such exemplary objects and advantages,and some embodiments may not achieve any of the stated objects andadvantages.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory onlyand are not restrictive of the disclosed embodiments, as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating an exemplary electron beaminspection (EBI) system, consistent with embodiments of the presentdisclosure.

FIG. 2 is a schematic diagram illustrating an exemplary electron beamtool that can be a part of the exemplary electron beam inspection systemof FIG. 1 , consistent with embodiments of the present disclosure.

FIGS. 3A-3D are diagrams illustrating exemplary surfaces of a detectorarray, consistent with embodiments of the present disclosure.

FIGS. 4A-4C are diagrams illustrating a cross sectional view of adetector, consistent with embodiments of the present disclosure.

FIGS. 5A and 5B are circuit diagrams illustrating a sensor layer andcircuit layer of a detector, consistent with embodiments of the presentdisclosure.

FIG. 6 is a simplified circuit schematic diagram illustrating anexemplary detector array, consistent with embodiments of the presentdisclosure.

FIG. 7 is a diagram illustrating one or more circuits relating locationdata of sensing elements, consistent with embodiments of the presentdisclosure.

FIG. 8 is a diagram illustrating a detection system using a detectorarray comprising a plurality of sensing elements, consistent withembodiments of the present disclosure.

DESCRIPTION OF EMBODIMENTS

Reference will now be made in detail to exemplary embodiments, examplesof which are illustrated in the accompanying drawings. The followingdescription refers to the accompanying drawings in which the samenumbers in different drawings represent the same or similar elementsunless otherwise represented. The implementations set forth in thefollowing description of exemplary embodiments do not represent allimplementations consistent with the invention. Instead, they are merelyexamples of apparatuses and methods consistent with aspects related tothe subject matter as recited in the appended claims.

Embodiments of the present disclosure provide a detector having an arrayarchitecture. The detector may enable field reconfiguration of sensingelements included on an array surface of the detector. The detector maycomprise switching elements, such as elements configured to connectpairs of sensing elements. Switching elements can control an electricalconnection between the two sensing elements of the pair. Switchingelements may comprise switches.

Switches configured to connect two sensing elements can be formed in aswitch matrix adjacent a sensing layer of a detector array, where thesensing layer contains the sensing elements. The switch matrix may beconfigured as an application specific integrated circuit (ASIC) composedof electrical components fabricated with standard device processes.Switches need not be embedded in the sensing layer. Thus, manufacturingof a detector array may be simplified.

Switching elements may comprise any of electrically operated switches.For example, a switch may comprise a relay, a transistor, an analogswitch, a solid-state relay, or semiconductor devices capable ofconnecting or disconnected an electrical circuit. A switch may have anelement for operating the switch that is controlled by logical elements.

The sensing elements can form an arbitrary number of groups witharbitrary shapes and an arbitrary number of sensing elements in eachgroup. A control circuit for each switch may be located beside eachcorresponding switch. The control circuit may comprise logical elements.The switch between pairs of sensing elements can be addressed by rowcontrol and/or line control wires. The control circuit and the switchesmay be contained in a common circuit die.

An array of sensing elements can be formed as a sensor layer in asubstrate. The control circuit may be formed as a circuit layer in asubstrate. The switching elements may be formed in the circuit layer.Alternatively, the switching elements may be formed as a separate layersandwiched between the sensing layer and the circuit layer.

In an arrangement consistent with aspects of the present disclosure,interconnections in the circuit layer can be simplified. Output signalof each group of sensing elements can be routed through multiple outputwires connected to the group. The output wires, together withconnections between sensing elements formed by the switches in thegroup, can form a network having a low equivalent output serialresistance and serial inductance. For example, in some embodiments, acontrol circuit may form a network that has reduced equivalent outputserial resistance and serial inductance compared to a conventionalmethods. Output impedance of grouped sensing elements can be reducedsuch that wide band operation is facilitated.

Embodiments of the present disclosure provide an electron beam tool withan electron detector. A circuit layer may be provided which is coupledwith the electron detector. The electron detector can be configured toreceive backscattered primary electrons and secondary electrons emittedfrom a sample. The received electrons form one or more beam spots on asurface of the detector. The surface of the detector can include aplurality of electron sensing elements configured to generate electricalsignals in response to receiving the electrons.

In some embodiments, the circuit layer may comprise pre-processingcircuitry and signal processing circuitry that are used to configuregrouping of the plurality of electron sensing elements. For example, thepre-processing circuitry and signal processing circuitry can beconfigured to generate indications related to the magnitude of thegenerated electrical signals. Such circuitry may comprise logic blocks,such as a gate associated with two sensing elements of the plurality ofsensing elements. The gate may be configured to determine a connectionstate based on signals generated from the sensing elements. The gate maybe controlled such that the two sensing elements are electricallyconnected or disconnected via the switching element configured toconnect the two sensing elements. Electrical signals generated from thesensing elements may be configured to pass through the switchingelement. Determinations may be made based on electrical signals from thesensing elements.

Post-processing circuitry may be configured to interact with acontroller configured to acquire an image of beams or beamlets based onthe output of the sensing elements. The controller may reconstruct animage of the beam. The controller may be configured to determine beamboundaries based on the reconstructed image, for example primary andsecondary boundaries of a beam spot.

Further implementations of post-processing circuitry may comprise one ormore circuits that can be configured to determine, based on generatedindications from the pre-processing circuitry, which of the electronsensing elements lie within a boundary of a beam spot, for example aprimary boundary. Processing may be carried out to generate a valuerepresenting the intensity of a beam spot based on the determinedprimary boundary. In some embodiments, a grouping can be used todetermine which of the electron sensing elements lie outside the primaryboundary of the beam spot. Noise signals may be estimated based on theoutput of sensing elements determined to be outside the primaryboundary. Post-processing circuitry can compensate for the estimatednoise signals when generating the intensity data of the beam spot.

Grouping of sensing elements may be based on electrical signalsgenerated by the sensing elements in response to being hit by electronsof an electron beam. Grouping may be based on electrical signals passingthrough the switching element configured to connect neighboring sensingelements. Grouping may also be based on determinations bypost-processing circuitry. For example, in some embodiments, primaryand/or secondary beam spot boundaries may be determined based on outputsignals of the sensing elements.

Local control logic associated with a pixel may generate an indicationof the signal level of the corresponding sensing element. Thisindication can be used to determine whether two adjacent sensingelements should be connected by the switching element. In this manner,groups can be formed. Based on the formed groups of sensing elements, aprimary boundary can be determined. Furthermore, in some embodiments,gradient information can be obtained and used to determine a secondaryboundary.

Electrons of an incident electron beam may have different properties,e.g., different energy due to different generation processes.Distribution or concentrations of electrons with different propertiesmay vary at different locations. Thus, within an electron beam, anintensity pattern in the detected electron beam spot may correspond toprimary or secondary boundaries.

Primary and secondary beam spot boundaries can be used to group outputsignals of corresponding electron sensing elements. The groups can beformed so that their geometrical arrangement matches the pattern of thecorresponding electron beam spot. As an example, a portion of theelectron beam spot detected by electron sensing elements within thesecondary beam boundary may consist almost entirely of backscatteredelectrons while a portion of the electron beam spot detected by electronsensing elements between the primary and secondary beam boundaries mayconsist almost entirely of secondary electrons. The formed groups cantherefore yield intensity information of the entire detected beam andalso the intensity information corresponding to the backscattered andsecondary electron portions of the electron beam. Accordingly, someembodiments can provide information about the detected electron beamspots and properties of the sample under investigation.

Reference will now be made in detail to the example embodiments, whichare illustrated in the accompanying drawings. Although the followingembodiments are described in the context of utilizing electron beams,the disclosure is not so limited. Other types of charged particle beamscan be similarly applied. Furthermore, detectors consistent with aspectsof the present disclosure are applicable in environments for sensingx-rays, photons, and other forms of energy.

Reference is now made to FIG. 1 , which illustrates an exemplaryelectron beam inspection (EBI) system 100 consistent with embodiments ofthe present disclosure. As shown in FIG. 1 , EBI system 100 includes amain chamber 101 a load/lock chamber 102, an electron beam tool 104, andan equipment front end module (EFEM) 106. Electron beam tool 104 islocated within main chamber 101. EFEM 106 includes a first loading port106 a and a second loading port 106 b. EFEM 106 may include additionalloading port(s). First loading port 106 a and second loading port 106 breceive wafer front opening unified pods (FOUPs) that contain wafers(e.g., semiconductor wafers or wafers made of other material(s)) orsamples to be inspected (wafers and samples are collectively referred toas “wafers” hereafter).

One or more robot arms (not shown) in EFEM 106 may transport the wafersto load/lock chamber 102. Load/lock chamber 102 is connected to aload/lock vacuum pump system (not shown) which removes gas molecules inload/lock chamber 102 to reach a first pressure below the atmosphericpressure. After reaching the first pressure, one or more robot arms (notshown) may transport the wafer from load/lock chamber 102 to mainchamber 101. Main chamber 101 is connected to a main chamber vacuum pumpsystem (not shown) which removes gas molecules in main chamber 101 toreach a second pressure below the first pressure. After reaching thesecond pressure, the wafer is subject to inspection by electron beamtool 104. Electron beam tool 104 may be a single-beam system or amulti-beam system. A controller 109 is electronically connected to theelectron beam tool 104. The controller 109 may be a computer configuredto execute various controls of the EBI system.

Reference is now made to FIG. 2 , which illustrates an electron beamtool 104 (also referred to herein as apparatus 104) that may beconfigured for use in a multi-beam image (MBI) system. Electron beamtool 104 comprises an electron source 202, a gun aperture 204, acondenser lens 206, a primary electron beam 210 emitted from electronsource 202, a source conversion unit 212, a plurality of beamlets 214,216, and 218 of primary electron beam 210, a primary projection opticalsystem 220, a wafer stage (not shown in FIG. 2 ), multiple secondaryelectron beams 236, 238, and 240, a secondary optical system 242, and anelectron detection device 244. Primary projection optical system 220 cancomprise a beam separator 222, deflection scanning unit 226, andobjective lens 228. Electron detection device 244 can comprise detectionsub-regions 246, 248, and 250.

Electron source 202, gun aperture 204, condenser lens 206, sourceconversion unit 212, beam separator 222, deflection scanning unit 226,and objective lens 228 can be aligned with a primary optical axis 260 ofapparatus 104. Secondary optical system 242 and electron detectiondevice 244 can be aligned with a secondary optical axis 252 of apparatus104.

Electron source 202 can comprise a cathode, an extractor or an anode,wherein primary electrons can be emitted from the cathode and extractedor accelerated to form a primary electron beam 210 with a crossover(virtual or real) 208. Primary electron beam 210 can be visualized asbeing emitted from crossover 208. Gun aperture 204 can block offperipheral electrons of primary electron beam 210 to reduce Coulombeffect. The Coulomb effect can cause an increase in size of probe spots270, 272, and 274.

Source conversion unit 212 can comprise an array of image-formingelements (not shown in FIG. 2 ) and an array of beam-limit apertures(not shown in FIG. 2 ). The array of image-forming elements can comprisean array of micro-deflectors or micro-lenses. The array of image-formingelements can form a plurality of parallel images (virtual or real) ofcrossover 208 with a plurality of beamlets 214, 216, and 218 of primaryelectron beam 210. The array of beam-limit apertures can limit theplurality of beamlets 214, 216, and 218.

Condenser lens 206 can focus primary electron beam 210. The electriccurrents of beamlets 214, 216, and 218 downstream of source conversionunit 212 can be varied by adjusting the focusing power of condenser lens206 or by changing the radial sizes of the corresponding beam-limitapertures within the array of beam-limit apertures. Objective lens 228can focus beamlets 214, 216, and 218 onto a wafer 230 for inspection andcan form a plurality of probe spots 270, 272, and 274 on surface ofwafer 230.

Beam separator 222 can be a beam separator of Wien filter typegenerating an electrostatic dipole field and a magnetic dipole field. Insome embodiments, if they arc applied, the force exerted byelectrostatic dipole field on an electron of beamlets 214, 216, and 218can be equal in magnitude and opposite in direction to the force exertedon the electron by magnetic dipole field. Beamlets 214, 216, and 218 cantherefore pass straight through beam separator 222 with zero deflectionangle. However, the total dispersion of beamlets 214, 216, and 218generated by beam separator 222 can also be non-zero. Beam separator 222can separate secondary electron beams 236, 238, and 240 from beamlets214, 216, and 218 and direct secondary electron beams 236, 238, and 240towards secondary optical system 242.

Deflection scanning unit 226 can deflect beamlets 214, 216, and 218 toscan probe spots 270, 272, and 274 over a surface area of wafer 230. Inresponse to incidence of beamlets 214, 216, and 218 at probe spots 270,272, and 274, secondary electron beams 236, 238, and 240 call he emittedfrom wafer 230. Secondary electron beams 236, 238, and 240 can compriseelectrons with a distribution of energies including secondary electrons(energies <50 eV) and backscattered electrons (energies between 50 eVand landing energies of beamlets 214, 216, and 218). Secondary opticalsystem 242 can focus secondary electron beams 236, 238, and 240 ontodetection sub-regions 246, 248, and 250 of electron detection device244. Detection sub-regions 246, 248, and 250 may be configured to detectcorresponding secondary electron beams 236, 238, and 240 and generatecorresponding signals used to reconstruct an image of surface area ofwafer 230.

Reference is now made to FIG. 3A, which illustrates an exemplarystructure of a sensor surface 300 that can form a detection surface ofelectron detection device 244. Sensor surface 300 can be divided intofour regions 302A-D (2×2 rectangular grid), each region 302 capable ofreceiving a corresponding beam spot 304 emitted from a particularlocation from wafer 230. All beam spots 304A-D may exhibit an idealround shape and have no loci offset. While four regions are displayed,it is appreciated that any plurality of regions could be used.Furthermore, a division of sensor surface 300 into four regions isarbitrary. An arbitrary selection of sensing elements 306 can be takento form a particular region. Detection sub-regions 246, 248, 250 indetector 244 may be constituted by such regions.

Each sensor region can comprise an array of electron sensing elements306. The electron sensing elements may comprise, for example, a PINdiode, avalanche diode, electron multiplier tube (EMT), etc., andcombinations thereof. Moreover, it is appreciated that while FIG. 3Ashows each region 302 being separated from each other as predefinedregions having their own sensing elements 306, these predefined regionsmay not exist, e.g., such as surface sensor 400 of FIG. 3C. For example,instead of having 4 predefined regions each having 81 sensing elements(a 9×9 grid of sensing elements), a sensor surface could have one 18×18grid of sensing elements, still capable of sensing four beam spots.

Electron sensing elements 306 can generate a current signal commensuratewith the electrons received in the sensor region. A pre-processingcircuit can convert the generated current signal into a voltage signal(representing the intensity of received electron beam spot). Thepre-processing circuit may comprise, for example, a high speedtransimpedance amplifier. A processing system can generate an intensitysignal of the electron beam spot by, for example, summing the currentsgenerated by the electron sensing elements located within a sensorregion, correlate the intensity signal with a scan path data of theprimary electron beam incident on the wafer, and construct an image ofthe wafer based on the correlation.

While electron sensing element 306 is described as receiving electronsfrom an electron beam, in the case of other types of detectors, a sensorsurface may be configured to generate a signal in response to receivingother types of irradiation. For example, a detector may react to chargedparticles having a particular charge. Also, a detector may be sensitiveto flux, spatial distribution, spectrum, or other measurable properties.Thus, a detector sensing element may be configured to generate a signalin response to receiving a certain type or level of energy, for example,electrons having a predetermined amount of energy.

In some embodiments, the processing system can selectively sum thesignals generated by some of the electron sensing elements 306 togenerate an intensity value of a beam spot. The selection can be basedon a determination of which of the electron sensing elements are locatedwithin the beam spot.

In some embodiments, the processing system can identify which of theelectron sensing elements are located outside a beam spot, and which ofthe electron sensing elements are located within the beam spot, byidentifying a boundary of the beam spot. For example, referring to FIG.3B, the processing system can identify primary boundaries 312A, 312B andsecondary boundaries 314A, 314B for beam spots 304A and 304B,respectively. Primary boundary 312 can be configured to enclose a set ofelectron sensing elements 306 of which the signal outputs are to beincluded to determine an intensity of the beam spot.

Secondary boundary 314 can be configured to enclose a center portion ofthe beam spot, and can be used to provide certain geometric informationof the beam spot. The geometric information may include, for example, ashape of the beam spot, one or more loci of the beam spot, etc. Here,the loci may refer to a predetermined location within the beam spot,such as a center. The processing system may also determine primaryboundary 312 based on secondary boundary 314.

Moreover, based on the loci information, the processing system can alsotrack a drift in the location of a beam spot 304 due to, for example,imperfections within the electron optics components or the electronoptics system. Imperfections may be those introduced duringmanufacturing or assembling processes. Furthermore, there may be driftintroduced during long-term operation of the system. The processingsystem can update the boundary determinations, and the set of electronsensing elements to be included in the intensity determination, tomitigate the effects of the drifting on the accuracy of intensitydetermination. Further, the processing system may track shifts in theelectron beam spots.

The selection of the electron sensing elements 306 that are used to formeach set of electron sensing elements surrounded by primary or secondaryboundaries 312 and 314 can be determined by a designated electroncollection ratio of each beam spot, which is related to the overallimage signal strength and signal to noise ratio, the signal crosstalk ofthe adjacent electron beams, and the corresponding shape and locus ofeach electron beam spot. Selection of electron sensing elements may becontrolled by processing circuitry located adjacent to the sensingelements or by an external controller, for example. The formation ofeach set may be static or may vary dynamically. Shape and locusvariation information of beam spots may be used, for example, to monitorperformance of the electron optical system (e.g., primary projectionoptical system 220). Information collected regarding the positioning andshape of the beam can be used, for example, in making adjustments to theelectron optical system. Accordingly, while FIG. 3B shows beam spot 304Bhaving a shape deviating from a round shape, such types of deviationssuch as location, shape, and grid information due to drift in theelectron optical system or imperfections of the components in theelectron optical system can be compensated for.

Reference is now made to FIG. 3D, which illustrates an exemplarystructure of a sensor surface 500 which can be used on electrondetection device 244. Sensor surface 500 has an array structurecomprising a plurality of sensing elements, including sensing elements501, 502, 503, and so on, each capable of receiving at least a part of abeam spot. Sensing elements 501, 502, 503 may be configured to generatean electrical signal in response to receiving energy.

The sensing element may comprise, for example, a PIN diode, avalanchediode, electron multiplier tube (EMT), and the like, and combinationsthereof. For example, sensing elements 501, 502, 503 may be electronsensing elements. Electron sensing elements can generate a currentsignal commensurate with the electrons received in the sensor activearea. A processing circuit can convert the generated current signal intoa voltage signal (representing the intensity of the received electronbeam spot). A processing system can generate an intensity signal of theelectron beam spot by, for example, summing the currents generated bythe electron sensing elements located within a sensor region, correlatethe intensity signal with a scan path data of the primary electron beamincident on the wafer, and construct an image of the wafer based on thecorrelation.

As shown in FIG. 3D, area 525 may be provided between adjacent sensingelements. Area 525 may be an isolation area to isolate the sides andcorners of neighboring pixels from one another.

Although sensor surface 500 is depicted as having a rectangular gridarrangement, various geometric arrangements may be used. For example,sensing elements may be arranged in a hexagonal grid. Accordingly,individual sensing elements may have correspondingly different sizes andshapes. Sensing elements may also be arranged with octagonal tiling,triangular tiling, rhombic tiling, etc. Sensing elements need not beprovided as uniform shapes and with regular packing. For example,pentagonal tiling with semiregular hexagons may be used. It is to beunderstood that these examples are exemplary, and various modificationsmay be applied.

Reference is now made to FIG. 4A, which illustrates a simplifiedillustration of a layer structure of a detector 600. Detector 600 may beprovided as detector 244 as shown in FIG. 2 . Detector 600 may beconfigured to have a plurality of layers stacked in a thicknessdirection, which may be substantially parallel to an incidence directionof an electron beam. The plurality of layers may include a sensor layer610 and a circuit layer 620. Sensor layer 610 may be provided withsensor surface 500, as described above. Sensing elements, for examplesensing elements 611, 612, and 613 may be provided in sensing layer 610.Switching elements 619 may be provided arranged between adjacent sensingelements in the cross sectional direction.

For example, each of sensing elements 611, 612, and 613 may beconfigured as diodes. Furthermore, switching elements 619 may beconfigured as transistors, such as a MOSFET. Each of sensing elements611, 612, 613 may comprise outputs for making electrical connections tocircuit layer 620. Outputs may be integrated with switching elements619, or may be provided separately. Outputs may be integrated in abottom layer of sensor layer 610 which may be a metal layer.

In one example, as illustrated in FIG. 4B, sensing elements 611,612, 613may be configured as PIN diodes. A detector device 600A may includesemiconductor devices. For example, a semiconductor device constitutinga PIN diode device may be manufactured as a substrate with a pluralityof layers. Additionally, sensing elements 611, 612, 613, and/orswitching elements 619 may be configured as a plurality of discretesemiconductor devices. The discrete semiconductor devices may beconfigured to be directly adjacent each other.

Detector device 600A may comprise a metal layer 601 as a top layer.Metal layer 601 is a layer for receiving electrons incident on theelectron detection device 244. Thus, metal layer 601 is configured as adetection surface. A material of metal layer 601 may be aluminum, forexample. When aluminum is used in metal layer 601, an oxidized layer maybe formed on the exterior of the surface so as to protect electrondetection device 244. Detector device 600A may also comprise metal layer605 as a bottom layer of sensor layer 610. A material of metal layer 605may be copper, for example. Metal layer 605 may comprise output linesfor carrying induced current from each of the sensing elements 611, 612,613. Individual sensing elements 611, 612, 613 may be separated by area625 in the cross sectional direction, where area 625 may be an isolationarea.

In operation of a PIN diode device that may constitute sensing element611, for example, a P+ region is formed adjacent to metal layer 601. P+region may be a p-type semiconductor layer. An intrinsic region isformed adjacent to P+ region. Intrinsic region may be an intrinsicsemiconductor layer. An N+ region is formed adjacent to intrinsicregion. N+ region may be an n-type semiconductor layer. Thus, theintrinsic region is sandwiched between the P+ region and N+ region. Whenelectrons are incident on the top surface of metal layer 601, theintrinsic region is flooded with charge carriers from P+ region. Thus,the area under metal layer 601 in the region irradiate will beactivated.

A sensor layer of electron detection device 244 may be formed as thelayers of metal layer 601, metal layer 605, and the various P+ regions,intrinsic regions, and N+ regions contained in sensing elements.

Circuit layer 620 is provided adjacent to sensor layer 610. Circuitlayer 620 comprises line wires and various electronic circuitcomponents. Circuit layer 620 may be provided as a semiconductor device.Circuit layer 620 may also comprise a processing system. Circuit layer620 may be configured to receive the output current detected in sensorlayer 610.

While the above descriptions discuss a metal or metal layers, it isapparent that alternatives could be used, for example, a conductivematerial.

In some embodiments, switching elements 619 may be formed in a separatedie. As illustrated in FIG. 4C, for example, a switch die 630 isprovided. Switch die 630 comprises the plurality of switching elements619. Switch die 630 is sandwiched between sensor layer 610 and circuitlayer 620. Switch die 630 is electrically connected to sensor layer 610and circuit layer 620.

A circuit schematic is shown in FIG. 5A. A dashed line represents adivision between a sensor die 701 and a circuit die 702. A layout suchas that shown in circuit die 702, for example, may represent a circuitprovided in circuit layer 620. A layout such as that shown in sensor die701, for example, may represent a plurality of sensing elements. Forexample, sensor layer 610 may be configured in a sensor die.

A further circuit schematic is shown in FIG. 5B. A layout shown incircuit die 702 may include an additional comparator 771, as shall bediscussed later.

A simplified circuit diagram is shown in FIG. 6 . As shown in FIG. 6 , aplurality of pixels P1, P2, P3, P4 may be provided. Pixels P1, P2, P3,P4 may represent pixels of a sensing array, each of which may beassociated with a sensing element.

In an exemplary process of detecting signal intensity from a sensingelement, a sensing element in a sensor layer is configured to gathercurrent induced by incident charged particles. Other types of energyconversion may be used. Current is output from the sensing element to acircuit layer configured to analyze the output from the sensing element.The circuit layer may comprise a wiring layout and a plurality ofelectronic components to analyze the output from the sensing element.

A process of signal intensity detection will be discussed with referenceto FIG. 5A. One pixel may be associated with one sensing element of asensing element array. Thus, a first pixel is configured to generate aPIN diode current 711. At the start of a process for PIN diode signalintensity detection, a switch 721 and a switch 731 are set to he open,while a switch 741 is set to be closed. Thus, voltage of a capacitor 735can be reset to Vref2.

Next, switch 721 and switch 741 are set to be open, while switch 731 isset to be closed. In this state, capacitor 735 begins charging andgenerates a voltage. Capacitor 735 may be configured to charge for apredetermined period of time, for example t_charge, after which switch731 is set to be open.

Then, comparator 736 compares the voltage at capacitor 735 to areference value Vref1. Reference value Vref1 may be set as apredetermined signal level. Based on the reference value, a circuit maybe configured to output a signal that indicates that the sensing elementis gathering current from an incident electron beam. Thus, the referencevalue may be a suitable value that indicates that the signal level fromthe PIN diode is high enough to be considered to be gathering currentfrom an incident electron beam included within a beam spot. Incomparator 736, if voltage from capacitor 735 is higher than Vref1, anoutput signal is sent to block 750.

Vref1 can be set so that each sensing element can be controlled to beincluded within an outer boundary of a beam spot. The value t_charge canbe determined based on local logic or an external circuit, for examplethrough a data line 752 communicating with block 750. Logic blocks andcircuitry components may be set so that functions such as signalintensity detection and pixel grouping determination can occur locally.However, signal intensity of each sensing element can be collected anddeterminations can be made via an external path. For example, an analogsignal path and ADC may communicate with an external controller via ananalog signal line and a data line.

As described herein, each pixel in a sensing array may be associatedwith a sensing element that generates current based on incidentelectrons on the sensing element, and communicates with a circuit layer.Pixels may be connected to circuitry such as that discussed above withreference to the first pixel configured to generate PIN diode current711. Thus, a second pixel may be configured to generate a PIN diodecurrent 712, and so on. PIN diode current 712 may be connected tocorresponding circuit elements, for example, switch 721 b, switch 731 b,switch 741 b, capacitor 735 b, comparator 736 b, block 750 b, etc.

Generation and setting of a status indicator will be discussed, againwith reference to FIG. 5A. Using the output current from the sensingelement, the circuit layer is configured to generate a status indicator.The status indicator may be configured to trigger a function forimplementing grouping of pixels. Various methods for achieving sensingelement grouping can be provided.

In a first method for grouping, sensing element grouping may be achievedaccording to a signal strength flag in a local logic circuit If a firstpixel and a second pixel have a strong signal strength, the two pixelsmay be grouped. For example, PIN diode current 711 and PIN diode current712 may both have high current values. Namely, voltage at capacitor 735and voltage at capacitor 735h may both he higher than Vref1. Then, aswitch 767 is set to he closed so as to merge the two pixels.

If at least one of the first pixel and the second pixel has a weaksignal, that is, either voltage at capacitor 735 or capacitor 735 b isless than Vref1, switch 767 is set to be open so that the two pixels arenot merged.

Switch 767 is configured as an element to implement a switch between twosensing elements. Switch 767 is located in circuit die 702. Switch 767may be configured as a transistor, such as a MOSFET. Switch 767 may alsobe configured as a relay, an analog switch, a solid-state relay, orother semiconductor devices.

Switch 767 may be triggered by local logic in the circuit die 702.Output from comparator 736 and output from comparator 736 b may berouted to a block for activating switch 767. For example, as illustratedin FIG. 5A, an AND gate 760 is provided. AND gate 760 is arranged incircuit die 702. AND gate 760 is associated with two pixels, and isassociated with one switch between the two pixels. Output fromcomparator 736 and 736 b may be routed, directly or through otherblocks, to AND gate 760. Based on signals input to AND gate 760, forexample status indicator 751 and status indicator 751 b, AND gate 760 isconfigured to toggle switch 767. When switch 767 is a transistor, suchas a field effect transistor, the switch may be toggled by applicationof voltage to its gate. A gate of the transistor may be arranged suchthat at least a contact of the gate is embedded in metal layer 605.Thus, in the configuration of FIG. 4B, for example, voltage may beapplied to a gate having a contact located in metal layer 605.Additionally, in the configuration of FIG. 4C, for example, metal layersmay be provided on a top and bottom of switch die 630. In thisconfiguration, a gate of the transistor switch may be arranged such thatat least a contact of the gate is embedded in the metal layer on thebottom of switch die 630.

While an AND gate is illustrated, it should be appreciated that variouscomponents may be used to achieve controlling a switch between sensingelements based on output signals from the sensing elements. For example,FIG. 6 is a simplified circuit diagram illustrating an arrangement offour pixels in an array. In the array, a first pixel P1 may beconfigured to generate a PIN diode current 711, and output a statussignal S1 based thereon. Status signal S1 may correspond to statusindicator 75L A second pixel P2 may be configured to generate PIN diodecurrent 712, and output a status signal S2 based thereon. Status signalS2 may correspond to status indicator 751 b.

Status signal S1 from first pixel P1 and status signal S2 from secondpixel P2 arc input to an AND gate 760. Status signal S1 and statussignal S2 can be generated based on signals generated at each of pixelP1 and pixel P2, for example, a current signal may be induced byelectrons incident on the surface of the pixel. Status signal S1 may begenerated based on whether current at pixel P1 reaches a predeterminedthreshold. Similarly, status signal S2 may be generated based on whethercurrent at pixel P2 reaches a predetermined threshold. AND gate 760outputs a signal based on status signal S1 and status signal S2 toswitch 767. Thus, switch 767 is configured to be controlled based oninput signals generated from at least two pixels. Such an input signalmay be a voltage. It will be apparent that various other blocks orelectrical components could be used to achieve control of switch 767.

Similar components may be provided for other pixels of the array. Forexample, a switch 767 d is provided between pixel P3 and pixel P4. PixelP3 and pixel P4 may be configured to output status signals S3 and S4,respectively, similar to pixels P1 and P2. Furthermore, a pixel may bein communication with multiple other pixels. For example, in addition toswitch 767 configured to connect pixels P1 and P2, a switch 767 b may beprovided between pixels P1 and P3, and so on.

Status signal S1 may be configured to be sent to multiple neighboringpixels.

In a second method for grouping, sensing element grouping may heachieved according to external logic circuits. For example, in FIGS. 5Aand 5B, block 750 may be a digital logic block. Block 750 maycommunicate with external components via data line 752 and an addresssignal 753. Status indicator 751 can be overwritten by external logiccircuitry via data line 752 to control the status of switch 767. Suchexternal logic circuitry may also be provided in circuit die 702, or maybe provided as a separate system attached to block 750 by aninput/output device.

In some embodiments, local control logic associated with each pixelgenerates an indication of signal level of its corresponding sensingelement. This indication can be used to determine whether two adjacentsensing elements should be connected by the switch configured to connectthem. In this way, groups of sensing elements can he formed. Based onthe formed groups, a primary boundary can be formed.

To generate gradient information on signal intensity, additionalcomparator 771 may be provided, as shown in FIG. 5B. A result fromcomparator 771 can be fed to logic blocks 750 and 750 b. With anarrangement including comparator 771, processing may be carried out togenerate a value representing the intensity of a beam spot based on thedetermined primary boundary. Grouping can be carried out based on whichelectron sensing elements are determined to lie outside the primaryboundary of the beam spot.

In electron beam imaging, beamlet image acquisition may be carried out.A process of image acquisition will be discussed with reference to FIG.5A. Initially, switch 721 and switch 731 are set to be open, whileswitch 741 is set to be closed. For each row of a detector array, switch721 (or a corresponding switch) is set to be closed, one-by-one. Bysequentially closing switch 721 and corresponding switches, electronicscanning of a detector surface can be carried out. Scanning may beimplemented to read the analog signal of each pixel. For example, analogoutput line 722 may be configured to be read by an analog path, outputto external devices, or sent to an analog-to-digital converter (ADC).

Based on signals output from analog output line 722, imagereconstruction of beams or beamlets can be achieved. A controller may beused to conduct image acquisition based on the reconstructed image. Thereconstructed image can be used to determine the boundary of a group ofsensing elements. For example, one group can be defined to correspond toone beamlet. Summed signal intensity of the sensing elements in thegroup is thus representative of the current of the one beamlet. Thereconstructed image can also be used to evaluate the performance of theelectron optical system. For example, primary projection optical system220 and/or secondary optical system 242 may be adjusted based on thereconstructed image. The reconstructed image may be used to compensatefor imperfections or drift in electron optical sub-systems.

Moreover, a low impedance output path of current signal from groups ofpixels can he achieved. For example, a plurality of switches, such asswitch 721, may be provided for a plurality of pixels in the same group.Pixels of the same group may be in close proximity. A plurality ofanalog signal lines, such as analog output line 722, may be routed to agrouped output. Additionally, the plurality of analog signal lines maybe connected when they are grouped to the same group of the plurality ofpixels.

For example, switch 767 may be configured to group together a firstsensing element and a second sensing element. Accordingly, PIN diodecurrent 711 and PIN diode current 712 may be routed together throughcircuit die 702. An output signal path for conveying PIN diode current711 may comprise analog output line 722 and/or other output linesdepending on which of switches 721 and 731 are open/closed. The outputsignal path may be part of the circuit die 702. Output signal paths forgrouped sensing elements may be connected via their correspondingswitching element.

While an example has been discussed with reference to electron beaminspection systems, it should be noted that for photo image sensorapplications, a buffer can be added after switch 721 to improveperformance.

In an exemplary embodiment of a detector array, individual sensingelements in the detector array can be enabled or disabled. In normaloperation for electron beam imaging, certain sensing elements may beenabled to detect incident beam current.

For example, with reference to FIG. 5A, a pixel may be enabled whenvoltage at capacitor 735 is greater than or equal to Vref1. A pixel mayalso be enabled by external logic circuits, for example in an overridemode. In override mode, switch 721 may be open or closed depending on acontrol signal from external logic to decide the signal output routing.In override mode, switch 731 may be set to be open and switch 741 may beset to be closed.

A pixel may be disabled when voltage at capacitor 735 is lower thanVref1. A pixel may also be disabled by external logic circuits, forexample in an override mode. In an override mode for disabling, switch721 may be set to be open. Switch 731 and switch 741 may be set to beclosed.

Operation in override modes may be conducted when, for example, it isdetermined that crosstalk is present in the sensing elements. Crosstalkcan occur when a beam partially overlaps with an adjacent beam due toaberration, dispersion, and the like. In some embodiments, a processingsystem can detect the occurrence of partial overlapping based on primaryor secondary beam spot boundaries. The processing system can excludeoutputs from some sensing elements that are located in the area wherebeam spots overlap when determining intensity values of beam spots.

Reference is now made to FIG. 7 , which illustrates a diagram relatinglocation data of sensing elements. A detector array may comprise aplurality of sensing elements arranged to form J×K pixels having M×Nchannels. A single sensing element may be represented by pixel P1. PixelP1 has an address column AC_1. Pixel P2 has an address column AC_2, andso on. For example, in the exemplary array having J×K pixels, pixelP_(JK) has an address column AC_J and an address row AR_K. Each columnmay have an analog column. For example, pixel P1 has analog columnAnC_1, which carries output current from the sensing element of pixelP1.

Each sensing element can be selected by address column and address rowsignals. For example, pixel P1 may be addressed by AC_1 and AR_1.

Data can be read and written by data row signals to each local logiccircuit associated with each sensing element. For example, data can besent to and received from pixel P1 via data row DR_1. Digital logic DLmay control data read/write, etc.

Analog signal from each sensing element may travel through correspondinganalog column lines to reach a multiplexer Mux. Multiplexer Mux may belocated in the detector array. Multiplexer Mux may also be external tothe detector array. Multiplexer Mux may have J inputs and M×N outputs.

Pixels can he identified and grouped by their respective address lineinformation. Any two pixels in a detector array can be in communication.Thus, grouping between any arbitrary number of pixels, in any arbitrarylocations, can be achieved.

Location information of the plurality of sensing elements may be used invarious ways. For example, location information may be correlated withbeam intensity to determine boundaries of beam spots. Additionally,based on the locations of the electron sensing elements that give riseto signal intensity comparator decisions, the processing system canidentify a location on the sensor surface where a transition between theintensity gradients occurs. Intensity gradient information can be usedfor determinations involving primary and secondary boundaries. In someembodiments, location data may also be used to operate in override modesto control switching elements between two pixels independently of locallogic.

A processing system, for example, a processor embedded in circuit die702 or externally connected may perform processing to determineidentified locations as part of a beam boundary. The processing systemmay comprise an arrangement of comparators configured to performprocessing based on voltage comparisons for each row and column ofelectron sensing elements to determine a set of locations on thedetector array surface that may make up a beam boundary.

In some embodiments, the processing system can also improve the fidelityof image reconstruction by compensating for the effect of noise signalsusing boundary information. The processing system can exclude signalsreceived from outputs of electron sensing elements that are determinedto be located outside a beam primary boundary. This can improve fidelityof image reconstruction by eliminating the random noise signals fromelectron sensing elements outside the primary boundary.

In FIG. 7 , lines interconnecting a plurality of sensing elements, forexample lines illustrated as AC_1, AR_1, DR_1, AnC_1, etc. may be wirelines patterned by printing a conductive material on a substrate. Wirelines can be manufactured in various manners, such as by normalprocesses used in fabricating a MOSFET. The wire lines may be part of acircuit layer of a detector array.

Reference is now made to FIG. 8 , which illustrates a detection system900 using a detector array comprising a plurality of sensing elements. Adetector array may be provided having a detector surface 500 that can beused on electron detection device 244. The detector array may compriseJ×K pixels, and have M×N outputs to be connected with a multiplexer, forexample multiplexer Mux. The detector array may be constructed as asubstrate including a sensor layer and a circuit layer, as discussedherein.

The detector array may be connected to a switch matrix 905. Switchmatrix 905 may be an analog switch matrix comprising local pixelcircuits, and having J×K inputs with and M×N outputs.

Switch matrix 905 may be connected to a signal conditioning circuitarray 910. Signal conditioning circuit array 910 may have M×N inputs andoutputs so as to match the output from switch matrix 905. Sinceswitching control can be implemented in switch matrix 905, output fromswitch matrix 905 may be simplified. When signal conditioning circuitarray 910 follows switch matrix 905, signal preconditioning occurring insignal condition circuit array can be simplified.

Signal conditioning circuit array 910 may be connected to a parallelanalog signal processing path array 920 for providing gain and offsetcontrol. Parallel analog signal processing path array 920 may have M×Ninputs and outputs so that signals from all groups of electron sensingelements are processed.

Parallel analog signal processing path array 920 may be connected to aparallel ADC array 930, which may have M×N inputs and outputs so thatsignals from all groups of electron sensing elements are digitized.

Parallel ADC array 930 may be connected to digital control unit 940.Digital control unit 940 may comprise a controller 941 which cancommunicate with parallel analog signal processing path array 920,parallel ADC array 930, and with switch matrix 905. Digital control unit940 may send and receive communications from a deflection and imagecontrol (DIC) unit via a transceiver.

An external controller, such as controller 941, may be configured toexecute imaging control. For example, controller 941 may be configuredto generate an image of detected beamlets. Furthermore, grouping can bedetermined on the basis of primary and secondary beam spot boundaries.

While FIG. 8 illustrates an arrangement where switch matrix 905 precedessignal conditioning circuit array 910, it should be appreciated thatthis sequence could be reversed.

Switch matrix 905 may comprise a circuit layout such as that shown incircuit die 702 of FIG. 5A, or in circuit die 702 of FIG. 5B, or asimilar arrangement Switch matrix 905 provide signal strength comparisonbetween electron sensing elements and a threshold voltage, for exampleVref1. Switch matrix 905 may also provide signal strength comparisonbetween adjacent electron sensing elements. Further, switch matrix 905may provide analog signal selection for analog-to-digital conversion.Analog-to-digital conversion may then be implemented at parallel ADCarray 930.

Switch matrix 905 may also provide, from a local digital logic circuit,signal strength status reading, such as comparisons between electronsensing elements and threshold voltage, and comparisons between electronsensing element pairs. Local switch status can be read or overwritten byexternal digital control circuits.

In some embodiments, switching matrix 905 can enable a simplifiedarchitecture for detection system 900. For example, reconfiguration ofelectron sensing elements can he implemented without an overly complexswitch matrix design. The output signal of each sensing element groupcan go through multiple output wires connected to the group. These wiresin conjunction with the connections between sensing elements in thegroup may form a network that largely reduces the equivalent outputserial resistance and serial inductance. Accordingly, in someembodiments, output impedance of a group of pixels can be reduceddramatically.

Furthermore, since J×K pixels are initially grouped in M×N groups in thedetector, the number of output may be reduced. Output from a pluralityof pixels that are grouped may have a common output. For example, anarrangement having M×N outputs can be achieved. Connection nodes betweenthe electron detector array and signal conditioning circuits (TIA) canbe dramatically reduced. The total number of outputs may be largelyreduced compared to conventional detector arrays. Thus, a constructionwhich is more apt for being scaled up can be achieved. Additionally, amore practical layout can be achieved, which may reduce the risk andcost involved in developing new devices.

Furthermore, a reduced number of signal conditioning circuits may resultin reduced total power consumption of an ASIC.

In addition, a trade-off relationship between pixel count anddifficulties of detector array manufacture can be eliminated. Forexample, pixel count limit may be related to the number of contactsformed with a switch matrix. Thus, by reducing the number of contactsand output lines used, higher pixel counts can be achieved. Also, highertolerance to individual pixel failure may be achieved.

The detector array may comprise its own memory so that the detectorarray can store an arrangement of the plurality of sensing elements andtheir associated circuitry. For example, the status of local indication751, and the grouping of sensing elements can be stored in the memory. Astate of switches can be stored in the memory.

Moreover, a switch matrix construction can be implemented with standarddevice processing, as would be understood to those having ordinary skillin the relevant art. Therefore, an increase in manufacturing difficultyand increased costs can be avoided.

The embodiments may further be described using the following clauses:

1. A detector comprising:

a substrate comprising a plurality of sensing elements including a firstelement and a second element; and

a switching element configured to connect the first element and thesecond element,

wherein the first element is configured to generate a first signal inresponse to the first element detecting first charged particles thatindicate a beam, and the second element is configured to generate asecond signal in response to the second element detecting second chargesparticles that indicate the beam, and

wherein the switching element is configured to be controlled based onthe first signal and the second signal.

2. The detector of clause 1, further comprising:

a sensor die that includes the substrate; and

a circuit die that includes the switching element and one or morecircuits configured to control the switching element.

3. The detector of any one of clauses 1 and 2, wherein the switchingelement comprises a switch configured to connect the first element andthe second element.

4. The detector of any one of clauses 1-3, wherein the substratecomprises a diode.

5. The detector of any one of clauses 1-4, wherein

the first element is configured to generate the first signal in responseto the first element receiving first charged particles with a firstpredetermined amount of energy, and the second element is configured togenerate the second signal in response to receiving second chargedparticles with a second predetermined amount of energy.

6. The detector of any one of clauses 1-4, wherein

the first element is configured to generate the first signal in responseto the first element receiving first electrons with a firstpredetermined amount of energy, and the second element is configured togenerate the second signal in response to receiving second electronswith a second predetermined amount of energy.

7. The detector of any one of clauses 1-6, wherein

in a thickness direction, the substrate comprises: a top metal layerconfigured as a detection surface, and a bottom metal layer, and

in a cross section, an area between the top metal layer and the bottommetal layer is a charge carrier region.

8. The detector of any one of clauses 1-7, wherein the switching elementcomprises a field effect transistor, wherein the field effect transistorcomprises at least a contact of a gate fabricated in a metal layer.

9. A detector comprising:

a sensor layer comprising an array of sensing elements including a firstelement and a second element wherein the first element and the secondelement are adjacent;

a circuit layer comprising one or more circuits electrically connectedto the first element and the second element; and

a switching element configured to connect the first element and thesecond element,

wherein the one or more circuits is configured to:

-   -   generate a first status indicator when the first element        receives charged particles with a predetermined amount of        energy,    -   generate a second status indicator when the second element        receives charged particles with a predetermined amount of        energy, and    -   control the switching element based on the first status        indicator and the second status indicator.

10. The detector of clause 9, wherein the switching element comprises atransistor.

11. The detector of clause 9, wherein the circuit layer comprises theswitching clement.

12. The detector of any one of clauses 9 and 10, wherein in a crosssection of the substrate, the sensor layer and the circuit layersandwich the switching element.

13. A detector system, comprising

a detector array comprising a plurality of sensing elements including afirst element and a second element;

a switching element configured to connect the first element and thesecond element;

one or more circuits configured to generate a first signal in responseto the first element detecting first charged particles that indicate abeam, and generate a second signal in response to the second elementdetecting second charged particles that indicate the beam; and

a controller connected to the one or more circuits.

14. The system of clause 13, further comprising a circuit layercomprising the switching element and the one or more circuits.

15. The system of any one of clauses 13 and 14, wherein

the controller is configured to control the switching element based onan address of any of the first element and the second element.

16. The system of any one of clauses 13-15, wherein

the controller is configured to acquire an image based on the beam, andgenerate a command signal based on the image; and

the one or more circuits are configured to control the switching elementbased on the command signal.

17. The system of any one of clauses 13-16, wherein

the detector array comprises a first number of pixels configured to begrouped in a second number of groups, the second number being less thanthe first number.

18. The system of clause 17, further comprising:

a signal conditioning circuit array;

a parallel analog signal processing path array;

a parallel analog-to-digital converter array; and

a digital control unit,

wherein the signal conditioning circuit array, the parallel analogsignal processing path array, the parallel analog-to-digital converterarray, and the digital control unit are connected to the detector arrayvia a plurality of channels, a number of the plurality of channels beinggreater than or equal to the second number.

19. The system of any one of clauses 13-18, wherein the controller isconfigured to override a local logic of the one or more circuits.

20. The system of any one of clauses 13-19, wherein the one or morecircuits comprise the controller.

21. The system of any one of clauses 13-19, wherein the controller isexternal to the detector array.

22. The system of any one of clauses 13-19, wherein the first elementand the second element have a common output.

23. The system of clause 18, wherein the number of the plurality ofchannels is equal to the second number.

24. A detector comprising:

a substrate comprising a plurality of sensing elements including a firstelement and a second element; and

a switching element configured to connect the first element and thesecond element,

wherein the first element is configured to generate a first signal inresponse to the first element detecting an input, and the second elementis configured to generate a second signal in response to the secondelement detecting an input,

wherein the switching element is configured to group together the firstelement and the second element.

25. The detector of clause 24, further comprising:

a first output signal path connected to the first element; and

a second output signal path connected to the second element,

wherein the switching element is configured to connect the first outputsignal path and the second output signal path.

26. The detector of any one of clauses 24 and 25, further comprising:

one or more circuits configured to control the switching element basedon the first signal and the second signal.

27. The detector of any one of clauses 24-26, further comprising:

a circuit die comprising the switching element.

28. The detector of clause 25, further comprising:

a circuit die comprising the switching element, the first output signalpath, and the second output signal path.

29. The detector of any one of clauses 24-28, wherein the detectorcomprises a first number of pixels configured to be grouped in a secondnumber of groups, the second number being less than the first number.

23. The detector of any one of clauses 5 or 6, wherein the firstpredetermined energy and the second predetermined energy are a samepredetermined energy.

24. The detector of any one of clauses 5 or 6, wherein the firstpredetermined energy and the second predetermined energy are differentpredetermined energies.

25. The detector of clause 5, wherein the charged particles areelectrons.

26. The detector of clause 13, wherein the one or more circuitscomprises a plurality of circuits, and wherein the controller beingconnected to the one or more circuits includes the controller beingconnected to any of the plurality of circuits.

The block diagrams in the Figures illustrate the architecture,functionality, and operation of possible implementations of systems,methods, and computer hardware/software products according to variousexemplary embodiments of the present disclosure. In this regard, eachblock in a flowchart or block diagram may represent a module, segment,or portion of code which comprises one or more executable instructionsfor implementing the specified logical functions. It should beunderstood that in some alternative implementations, functions indicatedin the block may occur out of the order noted in the Figures. Forexample, two blocks shown in succession may be executed or implementedsubstantially concurrently, or two blocks may sometimes be executed inreverse order, depending upon the functionality involved. It should alsobe understood that each block of the block diagrams, and combination ofthe blocks, can be implemented by special purpose hardware-based systemsthat perform the specified functions or acts, or by combinations ofspecial purpose hardware and computer instructions.

It will be appreciated that the present invention is not limited to theexact construction that has been described above and illustrated in theaccompanying drawings, and that various modifications and changes can bemade without departing from the scope thereof. For example, while anexemplary detector has been set forth and described with respect to anelectron beam system, a detector consistent with aspects of the presentdisclosure may be applied in a photo detector system, x-ray detectorsystem, and other detection systems for high energy ionizing particles,etc. Detectors according to aspects of the present disclosure may beapplied in a scanning electron microscope (SEM), a CMOS image sensor, aconsumer camera, a specialized camera, or industry-use camera, etc.

It is intended that the scope of the invention should only be limited bythe appended

1-15. (canceled)
 16. A detector, comprising: a substrate comprising aplurality of sensing elements including a first element and a secondelement; and a switching element configured to connect the first elementand the second element, wherein the first element is configured togenerate a first signal in response to the first element detecting firstcharged particles that indicate a beam, and the second element isconfigured to generate a second signal in response to the second elementdetecting second charges particles that indicate the beam, and whereinthe switching element is configured to be controlled based on the firstsignal and the second signal.
 17. The detector of claim 16, furthercomprising: a sensor die that includes the substrate; and a circuit diethat includes the switching element and one or more circuits configuredto control the switching element.
 18. The detector of claim 16, whereinthe switching element comprises a switch configured to connect the firstelement and the second element.
 19. The detector of claim 16, whereinthe substrate comprises a diode.
 20. The detector of claim 16, whereinthe first element is configured to generate the first signal in responseto the first element receiving first charged particles with a firstpredetermined amount of energy, and the second element is configured togenerate the second signal in response to receiving second chargedparticles with a second predetermined amount of energy.
 21. The detectorof claim 16, wherein the first element is configured to generate thefirst signal in response to the first element receiving first electronswith a first predetermined amount of energy, and the second element isconfigured to generate the second signal in response to receiving secondelectrons with a second predetermined amount of energy.
 22. The detectorof claim 16, wherein: in a thickness direction, the substrate comprises:a top metal layer configured as a detection surface, and a bottom metallayer, and in a cross section, an area between the top metal layer andthe bottom metal layer is a charge carrier region.
 23. The detector ofclaim 16, wherein the switching element comprises a field effecttransistor, wherein the field effect transistor comprises at least acontact of a gate fabricated in a metal layer.
 24. A detectorcomprising: a sensor layer comprising an array of sensing elementsincluding a first element and a second element, wherein the firstelement and the second element are adjacent; a circuit layer comprisingone or more circuits electrically connected to the first element and thesecond element, and a switching element configured to connect the firstelement and the second element, wherein the one or more circuits isconfigured to: generate a first status indicator when the first elementreceives charged particles with a first predetermined amount of energy;generate a second status indicator when the second element receivescharged particles with a second predetermined amount of energy, andcontrol the switching element based on the first status indicator andthe second status indicator.
 25. The detector of claim 24, wherein theswitching element comprises a transistor.
 26. The detector of claim 24,wherein the circuit layer comprises the switching element.
 27. Thedetector of claim 24, wherein in a cross section of the substrate, thesensor layer and the circuit layer sandwich the switching element. 28.The detector of claim 24, wherein the first predetermined energy and thesecond predetermined energy are different predetermined energies. 29.The detector of claim 24, wherein the first predetermined energy and thesecond predetermined energy are the same predetermined energy.
 30. Thedetector of claim 24, wherein the one or more circuits further comprisea gate; and the first status indicator and the second status indicatorare configured to be input to the gate.
 31. The detector of claim 30,wherein the gate is configured to toggle the switching element based onthe first status indicator and the second status indicator.
 32. Thedetector of claim 24, further comprising: a first comparator configuredto compare a first voltage of a first capacitor to a first referencevalue, the first capacitor receiving charge from the first element; anda second comparator configured to compare a second voltage of a secondcapacitor to the first reference value, the second capacitor receivingcharge from the second element.
 33. The detector of claim 24, wherein:the one or more circuits is configured to control the switching elementin response to the first status indicator and the second statusindicator being generated, and the controlling comprises merging a firstoutput of the first element with a second output of the second elementby the switching element.
 34. The detector of claim 24, wherein the oneor more circuits is configured to control the switching element inresponse to the first status indicator or the second status indicatornot being generated, and the controlling comprises preventing a mergingof a first output of the first element with a second output of thesecond element by the switching element.
 35. A charged particledetector, comprising: a sensor layer comprising an array of chargedparticle sensing elements including a first element and a secondelement; and a switching element configured to selectively couple afirst output of the first element with a second output of the secondelement based on a first level of the first output of the first sensingelement and a second level of the second output of the second sensingelement.